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IRFL110TRPBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.779577
≥1 USD $0.779577
≥10 USD $0.735451
≥100 USD $0.693824
≥500 USD $0.654543
≥1000 USD $0.617495
Inventory: 790
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package SOT-223
Weight 250.212891mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 2W Ta 3.1W Tc
Element Configuration Single
Current 15A
Power Dissipation 3.1W
Turn On Delay Time 6.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 180pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ

Dimensions

Height 1.8mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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