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SIA415DJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 12A SC70-6
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Buying Options
Total Price: USD $0.59
Unit Price: USD $0.5947
≥1 USD $0.5947
≥10 USD $0.4883
≥100 USD $0.4731
≥500 USD $0.4579
≥1000 USD $0.4427
Inventory: 4696
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 35mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 5.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 50 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -12A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 8.4A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 30A
Nominal Vgs -1.5 V

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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