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BUK7M12-60EX
RoHS 
RoHS compliant
RoHS compliantPackage SOT-1210, 8-LFPAK33
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 53A LFPAK33
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Buying Options
Total Price: USD $11.06
Unit Price: USD $11.0599
≥1 USD $11.0599
≥10 USD $9.07535
≥100 USD $8.7913
≥500 USD $8.5082
≥1000 USD $8.22415
Inventory: 5598
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1625pF @ 25V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 53A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 211A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 34.3 mJ
Compliance
RoHS Status ROHS3 Compliant
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