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FDC642P-F085

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 4A 6SSOT
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Buying Options
Total Price: USD $0.11
Unit Price: USD $0.108316
≥1 USD $0.108316
≥10 USD $0.102189
≥100 USD $0.096406
≥500 USD $0.090948
≥1000 USD $0.085802
Inventory: 9090
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.2W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 72 mJ

Compliance

RoHS Status ROHS3 Compliant

Physical

Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON

Alternative Model

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