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FDMC7680
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Chan 30/20V PowerTrench
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Buying Options
Total Price: USD $2.05
Unit Price: USD $2.054938
≥1 USD $2.054938
≥10 USD $1.938622
≥100 USD $1.828886
≥500 USD $1.72537
≥1000 USD $1.627712
Inventory: 468
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 7.2MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 31W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 14.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2855pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14.8A Ta
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 14.8A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 72 mJ
Nominal Vgs 2 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 750μm
Length 3.3mm
Width 3.3mm
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