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CSD25481F4T
RoHS 
RoHS compliant
RoHS compliantPackage 3-XFDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
TEXAS INSTRUMENTS CSD25481F4T MOSFET Transistor, P Channel, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
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Buying Options
Total Price: USD $0.13
Unit Price: USD $0.1349
≥1 USD $0.1349
≥10 USD $0.1102
≥100 USD $0.10735
≥500 USD $0.10355
≥1000 USD $0.1007
Inventory: 4542
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD25481
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 4.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 88m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 189pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 0.91nC @ 4.5V
Rise Time 3.6 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) -12V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 16.9 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage -950mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Dimensions
Height 350μm
Length 1.035mm
Width 635μm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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