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NTGS3446T1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-23-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 2.5A 6TSOP
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Inventory: 5249
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 36MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5.1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 5.1A
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.5A
Drain to Source Breakdown Voltage 20V
Nominal Vgs 850 mV

Dimensions

Height 1mm
Length 3.1mm
Width 1.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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