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BUK7880-55A/CUX

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Single N-Channel 55 V 148 mOhm 12 nC 8 W Silicon Surface Mount Mosfet - SOT-223
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Buying Options
Total Price: USD $2.25
Unit Price: USD $2.245369
≥1 USD $2.245369
≥10 USD $2.118279
≥100 USD $1.998376
≥500 USD $1.885261
≥1000 USD $1.778543
Inventory: 9763
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 52ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 53 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

MMVL809T1G

ON Semiconductor

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