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DMN2230U-7
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 2A SOT23-3
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Buying Options
Total Price: USD $0.59
Unit Price: USD $0.1178
≥5 USD $0.1178
≥50 USD $0.0969
≥150 USD $0.09405
≥500 USD $0.0912
≥3000 USD $0.0874
≥6000 USD $0.07885
Inventory: 4980
Minimum: 5
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 600mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 188pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Rise Time 3.8 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 19.6 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 20V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1mm
Length 2.9mm
Width 1.3mm
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