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PSMN3R0-30YLDX

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 100A LFPAK
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Buying Options
Total Price: USD $2.21
Unit Price: USD $2.21255
≥1 USD $2.21255
≥10 USD $1.81545
≥100 USD $1.75845
≥500 USD $1.70145
≥1000 USD $1.6454
Inventory: 6480
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 91W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 91W
Case Connection DRAIN
Turn On Delay Time 13.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2939pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 46.4nC @ 10V
Rise Time 21ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12.4 ns
Turn-Off Delay Time 16.9 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 227.5 mJ

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