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PSMN3R5-30YL,115
RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
In a Pack of 25, PSMN3R5-30YL, 115 N-Channel MOSFET, 100 A, 30 V, 4+Tab-Pin LFPAK Nexperia
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Buying Options
Total Price: USD $10.8
Unit Price: USD $10.80245
≥1 USD $10.80245
≥10 USD $8.8635
≥30 USD $8.58705
≥100 USD $8.30965
Inventory: 4848
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 74W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 74W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2458pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0056Ohm
Drain to Source Breakdown Voltage 30V
Dimensions
Height 6.35mm
Length 6.35mm
Width 6.35mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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