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FDMS7682

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 30V 16A 8-Pin Power 56 T/R
Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 5669
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 74mg
Transistor Element Material SILICON

Dimensions

Height 1.05mm
Length 5mm
Width 6mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection DRAIN
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1885pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 2.7 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 22A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 59A
Drain-source On Resistance-Max 0.0063Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 29 mJ
Nominal Vgs 1.9 V

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