Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
PSMN027-100BS,118
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 37A D2PAK
PDF
/
Buying Options
Total Price: USD $13.42
Unit Price: USD $13.42445
≥1 USD $13.42445
≥10 USD $11.01525
≥100 USD $10.6704
≥500 USD $10.3265
≥1000 USD $9.9826
Inventory: 6786
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 103W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1624pF @ 50V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 11.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 29.6 ns
Continuous Drain Current (ID) 37A
Gate to Source Voltage (Vgs) 4.9V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0268Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 148A
Avalanche Energy Rating (Eas) 59 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
RJK0656DPB-00#J5
Renesas Electronics AmericaRecommended For You
D400N12B
Infineon