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HUF75652G3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 75A TO-247
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Buying Options
Total Price: USD $10.74
Unit Price: USD $10.73975
≥1 USD $10.73975
≥10 USD $8.8122
≥100 USD $8.5367
≥500 USD $8.2612
≥1000 USD $7.9857
Inventory: 7776
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Dimensions
Height 20.82mm
Length 15.87mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 75A
Number of Elements 1
Power Dissipation-Max 515W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 515W
Case Connection DRAIN
Turn On Delay Time 18.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7585pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 475nC @ 20V
Rise Time 195 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 190 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 4 V
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