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IPA80R280P7XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 17A TO220
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.890419
≥1 USD $0.890419
≥10 USD $0.840024
≥100 USD $0.79247
≥500 USD $0.747616
≥1000 USD $0.705299
Inventory: 6380
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 7.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 360μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 500V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 45A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 43 mJ
FET Feature Super Junction
Alternative Model
IPD60R650CEBTMA1
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