Operating Temperature -55°C~150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 192W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3.5V @ 930μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2540pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 3.5V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.14Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 56A
Avalanche Energy Rating (Eas) 616 mJ