Welcome to flywing-tech.com
  • English
FCPF11N60NT image
Favorite
FCPF11N60NT image
Favorite

FCPF11N60NT

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 10.8A TO220F
PDF
/
Buying Options
Total Price: USD $2.48
Unit Price: USD $2.4814
≥1 USD $2.4814
≥10 USD $2.03585
≥30 USD $1.9722
≥100 USD $1.90855
Inventory: 9478
Minimum: 1
-
+

Technical Details

Supply Chain

Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series SuperMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 32.1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 32.1W
Case Connection ISOLATED
Turn On Delay Time 13.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1505pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.8A Tc
Gate Charge (Qg) (Max) @ Vgs 35.6nC @ 10V
Rise Time 9.1 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 10.8A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.299Ohm
Drain to Source Breakdown Voltage 600V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 15.9mm
Length 10.16mm
Width 4.7mm

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON

Alternative Model

Recommended For You