Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 32.1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13.6 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1505pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.8A Tc
Gate Charge (Qg) (Max) @ Vgs 35.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 10.8A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.299Ohm
Drain to Source Breakdown Voltage 600V