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IRFZ44SPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 50A D2PAK
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.540843
≥1 USD $0.540843
≥10 USD $0.510228
≥100 USD $0.481348
≥500 USD $0.454107
≥1000 USD $0.428403
Inventory: 8920
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 110 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 92 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 60V
Alternative Model
SPA20N60C3XKSA1
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