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IRFBC40ASPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 6.2A D2PAK
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Buying Options
Total Price: USD $2.96
Unit Price: USD $2.96115
≥1 USD $2.96115
≥10 USD $2.4301
≥100 USD $2.3541
≥500 USD $2.2781
≥1000 USD $2.2021
Inventory: 3832
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1036pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 6.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.036nF
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Nominal Vgs 4 V
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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