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SIHG22N60E-GE3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
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Buying Options
Total Price: USD $4.15
Unit Price: USD $4.1477
≥1 USD $4.1477
≥10 USD $3.40385
≥100 USD $3.29745
≥500 USD $3.19105
≥1000 USD $3.08465
Inventory: 6806
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Weight 38.000013g
Dimensions
Height 20.82mm
Length 15.87mm
Width 5.31mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 180mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Power Dissipation 227W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.92nF
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
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