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IRFD020PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 50 V 0.1 Ohms Through Hole Power Mosfet - DIP-4
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Buying Options
Total Price: USD $10.29
Unit Price: USD $10.28565
≥1 USD $10.28565
≥200 USD $8.4398
≥500 USD $8.1757
≥1000 USD $7.91255
Inventory: 1860
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 100mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 3
JESD-30 Code R-PDIP-T3
Number of Elements 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 8.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.4A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Alternative Model
IRF7904TRPBF-1
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