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IRFU310PBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 400V 1.7A I-PAK
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 6319
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package TO-251AA
Weight 329.988449mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.6Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 25W Tc
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 7.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 9.9ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 400V
Input Capacitance 170pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 3.6Ohm
Rds On Max 3.6 Ω

Dimensions

Height 6.22mm
Length 6.73mm
Width 2.39mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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