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IRFD9010PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 50V 1.1A 4-DIP
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Buying Options
Total Price: USD $2.23
Unit Price: USD $2.23323
≥1 USD $2.23323
≥10 USD $2.106819
≥100 USD $1.987565
≥500 USD $1.875058
≥1000 USD $1.768921
Inventory: 2101
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Dimensions
Height 3.3782mm
Length 6.2738mm
Width 5.0038mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -50V
Technology MOSFET (Metal Oxide)
Current Rating -1.1A
Power Dissipation-Max 1W Tc
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 6.1 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 580mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 47ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) -1.1A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 50V
Input Capacitance 240pF
Drain to Source Resistance 350mOhm
Rds On Max 500 mΩ
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