Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IRFBC20PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) TO-220AB
PDF
/
Buying Options
Total Price: USD $0.24
Unit Price: USD $0.2356
≥1 USD $0.2356
≥10 USD $0.19285
≥100 USD $0.18715
≥500 USD $0.18145
≥1000 USD $0.1748
Inventory: 6262
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.4Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 350pF
Drain to Source Resistance 4.4Ohm
Rds On Max 4.4 Ω
Nominal Vgs 4 V
Compliance
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Alternative Model
RN2971FE(TE85L,F)
Toshiba Semiconductor and StorageRecommended For You
BCR 196T E6327
Infineon Technologies