Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
PSMN015-60PS,127
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
NEXPERIA - PSMN015-60PS,127 - MOSFET, N CHANNEL, 60V, 50A, 3-TO-220AB
PDF
/
Buying Options
Total Price: USD $7.11
Unit Price: USD $7.11075
≥1 USD $7.11075
≥10 USD $5.83395
≥100 USD $5.65155
≥500 USD $5.46915
≥1000 USD $5.2877
Inventory: 9103
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 9.071847g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 86W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 86W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 30V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 20.9nC @ 10V
Rise Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 50A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 44 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Dimensions
Height 6.35mm
Length 6.35mm
Width 6.35mm
Alternative Model
NVMYS5D3N04CTWG
ON SemiconductorRecommended For You
IRFSL33N15DTRRP
Infineon Technologies