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STF18N55M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 550V 13A TO220FP
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Buying Options
Total Price: USD $2.47
Unit Price: USD $2.4681
≥1 USD $2.4681
≥10 USD $2.0254
≥100 USD $1.96175
≥500 USD $1.8981
≥1000 USD $1.8354
Inventory: 3862
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 240MOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF18
Pin Count 3
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 192m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 9.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 200 mJ
Dimensions
Height 16.4mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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