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STB22NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 16A D2PAK
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 5189
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status NRND (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 220mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB22N
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 50V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 64A
Dimensions
Height 4.6mm
Length 10.75mm
Width 10.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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