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HAT2160H-EL-E
RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 20V 60A 5-Pin(4+Tab) LFPAK T/R
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Buying Options
Total Price: USD $1.61
Unit Price: USD $1.6112
≥1 USD $1.6112
≥10 USD $1.3224
≥100 USD $1.2806
≥500 USD $1.23975
≥1000 USD $1.19795
Inventory: 4524
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Copper, Gold, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 5
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 240A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
JANTXV2N3716
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