Welcome to flywing-tech.com
  • English
DMG3415UFY4Q-7 image
Favorite
DMG3415UFY4Q-7 image
Favorite

DMG3415UFY4Q-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-XDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 16V 2.5A X2-DFN2015
PDF
/
Buying Options
Total Price: USD $0.24
Unit Price: USD $0.24225
≥1 USD $0.24225
≥10 USD $0.19855
≥100 USD $0.19285
≥500 USD $0.1862
≥1000 USD $0.1805
Inventory: 3862
Minimum: 1
-
+

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XDFN
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 650mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 282pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 16V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 2.5A
Drain Current-Max (Abs) (ID) 0.0025A
DS Breakdown Voltage-Min 16V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

Recommended For You