Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 350mW Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 510m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 122pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.51Ohm