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STD2NC45-1

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 450V 1.5A IPAK
Buying Options
Total Price: USD $4.67
Unit Price: USD $4.66735
≥1 USD $4.66735
≥10 USD $3.82945
≥100 USD $3.70975
≥500 USD $3.59005
≥1000 USD $3.47035
Inventory: 916
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD2N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Turn On Delay Time 6.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 4 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 8.5 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 450V
Pulsed Drain Current-Max (IDM) 6A
Dual Supply Voltage 450V
Avalanche Energy Rating (Eas) 25 mJ
Nominal Vgs 3 V

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