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SI4488DY-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 3.5A 8-SOIC
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Buying Options
Total Price: USD $4.98
Unit Price: USD $4.97705
≥1 USD $4.97705
≥10 USD $4.08405
≥100 USD $3.95675
≥500 USD $3.8285
≥1000 USD $3.7012
Inventory: 9636
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Dimensions
Height 1.5494mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.56W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Nominal Vgs 2 V
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IXFT30N60Q
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