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IRFH7085TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 23A 6-PQFN
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Buying Options
Total Price: USD $2.19
Unit Price: USD $2.19413
≥1 USD $2.19413
≥10 USD $2.06994
≥100 USD $1.95277
≥500 USD $1.842236
≥1000 USD $1.73796
Inventory: 1325
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0032Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 590A
Avalanche Energy Rating (Eas) 554 mJ
Max Junction Temperature (Tj) 150°C
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 950μm
Length 6.15mm
Width 5.15mm
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