Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 250mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Drive Voltage (Max Rds On,Min Rds On) 3V 5V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Feedback Cap-Max (Crss) 7 pF