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BSC061N08NS5ATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 80V 82A TDSON-8
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Buying Options
Total Price: USD $0.97
Unit Price: USD $0.96805
≥1 USD $0.96805
≥10 USD $0.7942
≥100 USD $0.7695
≥500 USD $0.7448
≥1000 USD $0.7201
Inventory: 2900
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 74W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.1m Ω @ 41A, 10V
Vgs(th) (Max) @ Id 3.8V @ 41μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 40V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 82A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Avalanche Energy Rating (Eas) 50 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Alternative Model
STD9NM40N
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