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SI7308DN-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? 1212-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 60V 6.0A 19.8W 58mohm @ 10V
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Buying Options
Total Price: USD $3.32
Unit Price: USD $3.31835
≥1 USD $3.31835
≥10 USD $2.7227
≥100 USD $2.63815
≥500 USD $2.55265
≥1000 USD $2.46715
Inventory: 6206
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 58MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 19.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.4A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 20A
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.04mm
Length 3.05mm
Width 3.05mm
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