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CSD17527Q5A
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 65A 8SON
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Buying Options
Total Price: USD $0.66
Unit Price: USD $0.66405
≥1 USD $0.66405
≥10 USD $0.5453
≥100 USD $0.5282
≥500 USD $0.5111
≥1000 USD $0.494
Inventory: 3902
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Length 4.9mm
Width 6mm
Thickness 1mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17527
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 5.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.8m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 506pF @ 15V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V
Rise Time 8.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 9.8 ns
Continuous Drain Current (ID) 65A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 45 mJ
Feedback Cap-Max (Crss) 33 pF
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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