Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 117W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 530μA
Input Capacitance (Ciss) (Max) @ Vds 1952pF @ 400V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain-source On Resistance-Max 0.099Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 105 mJ