Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 22.5 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7 Ω @ 1.75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1154pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 51.5 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 250 mJ