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SPA11N80C3XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 11A TO220FP
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Buying Options
Total Price: USD $2.28
Unit Price: USD $2.28285
≥1 USD $2.28285
≥10 USD $1.87245
≥100 USD $1.8145
≥500 USD $1.7556
≥1000 USD $1.69765
Inventory: 2327
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 11A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Voltage 800V
Power Dissipation-Max 34W Tc
Element Configuration Single
Current 11A
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.45Ohm
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 470 mJ
Dimensions
Height 9.83mm
Length 10.65mm
Width 4.85mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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