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IRF1407PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 130A TO-220AB
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Buying Options
Total Price: USD $0.86
Unit Price: USD $0.85785
≥1 USD $0.85785
≥10 USD $0.70395
≥100 USD $0.6821
≥500 USD $0.6593
≥1000 USD $0.63745
Inventory: 1809
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 7.8Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 130A
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.8mOhm @ 78A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 140 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Input Capacitance 5.6nF
Drain to Source Resistance 7.8mOhm
Rds On Max 7.8 mΩ
Nominal Vgs 4 V
Dimensions
Height 16.51mm
Length 10.668mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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