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IRFIZ44NPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 31A TO220FP
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 6766
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 30A
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection ISOLATED
Turn On Delay Time 7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 69 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 31A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 98 ns
Isolation Voltage 2.5kV
Nominal Vgs 4 V
Dimensions
Height 9.8mm
Length 10.6172mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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