Welcome to flywing-tech.com
  • English
IRF1404PBF image
Favorite
IRF1404PBF image
Favorite

IRF1404PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 202A TO-220AB
PDF
/
Buying Options
Total Price: USD $0.7
Unit Price: USD $0.69825
≥1 USD $0.69825
≥10 USD $0.57285
≥100 USD $0.5548
≥500 USD $0.5377
≥1000 USD $0.51965
Inventory: 8364
Minimum: 1
-
+

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Dimensions

Height 19.8mm
Length 10.668mm
Width 4.826mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55┬?C~175┬?C TJ
Packaging Tube
Published 2003
Series HEXFET┬?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 4mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 162A
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 333W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 333W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m ╬? @ 121A, 10V
Vgs(th) (Max) @ Id 4V @ 250╬╝A
Input Capacitance (Ciss) (Max) @ Vds 5669pF @ 25V
Current - Continuous Drain (Id) @ 25┬?C 202A Tc
Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V
Rise Time 190 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ┬?20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 202A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 808A
Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 620 mJ
Recovery Time 117 ns
Max Junction Temperature (Tj) 175┬?C
Nominal Vgs 4 V

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

Recommended For You