Operating Temperature -55┬?C~175┬?C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 333W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m ╬? @ 121A, 10V
Vgs(th) (Max) @ Id 4V @ 250╬╝A
Input Capacitance (Ciss) (Max) @ Vds 5669pF @ 25V
Current - Continuous Drain (Id) @ 25┬?C 202A Tc
Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 202A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 808A
Avalanche Energy Rating (Eas) 620 mJ
Max Junction Temperature (Tj) 175┬?C