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IRFB4410ZPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 97A TO-220AB
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥50 USD $0.4275
≥100 USD $0.41325
≥500 USD $0.39995
≥1200 USD $0.35815
Inventory: 35351
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Height 19.8mm
Length 10.6426mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 9MOhm
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 50V
Current - Continuous Drain (Id) @ 25°C 97A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 52 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 96A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 97A
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 242 mJ
Recovery Time 57 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
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