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FQP19N20C
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 19A TO-220
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 9177
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Dimensions
Height 9.4mm
Length 10.1mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 170mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 19A
Number of Elements 1
Power Dissipation-Max 139W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 139W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 115 ns
Turn-Off Delay Time 135 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 76A
Alternative Model
AUIRFR540Z
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