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IRF830APBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 5A TO-220AB
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Buying Options
Total Price: USD $1.17
Unit Price: USD $1.1723
≥1 USD $1.1723
≥10 USD $0.96235
≥100 USD $0.93195
≥500 USD $0.9025
≥1000 USD $0.8721
Inventory: 976
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.4Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 5A
Number of Elements 1
Number of Channels 1
Voltage 500V
Power Dissipation-Max 74W Tc
Element Configuration Single
Current 5A
Power Dissipation 74W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 620pF
Recovery Time 650 ns
Drain to Source Resistance 1.4Ohm
Rds On Max 1.4 Ω
Nominal Vgs 4.5 V
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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