Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
PSMN7R0-60YS,115
RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V LFPAK
PDF
/
Buying Options
Total Price: USD $5.53
Unit Price: USD $5.52995
≥1 USD $5.52995
≥10 USD $4.53815
≥100 USD $4.39565
≥500 USD $4.2541
≥1000 USD $4.11255
Inventory: 1609
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 117W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2712pF @ 30V
Current - Continuous Drain (Id) @ 25°C 89A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code MO-235
Drain Current-Max (Abs) (ID) 89A
Pulsed Drain Current-Max (IDM) 356A
DS Breakdown Voltage-Min 60V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
IPB100N08S2L07ATMA1
Infineon TechnologiesRecommended For You
JANTXV2N7227
Microsemi Corporation