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DMP6023LSS-13
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
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Buying Options
Total Price: USD $0.29
Unit Price: USD $0.291464
≥1 USD $0.291464
≥10 USD $0.252077
≥30 USD $0.235009
≥100 USD $0.215316
≥500 USD $0.174616
≥1000 USD $0.169364
Inventory: 10925
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Capacitance 2.569nF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.2W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2569pF @ 30V
Current - Continuous Drain (Id) @ 25°C 6.6A Ta
Gate Charge (Qg) (Max) @ Vgs 53.1nC @ 10V
Rise Time 7.1 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 6.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 62.9 mJ
Compliance
RoHS Status ROHS3 Compliant
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