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FDMS3672
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 100V 7.4A 8-Pin MLP EP T/R
PDF
Buying Options
Total Price: USD $1.24
Unit Price: USD $1.2445
≥1 USD $1.2445
≥10 USD $1.02125
≥100 USD $0.9899
≥500 USD $0.9576
≥1000 USD $0.9253
Inventory: 2557
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series UltraFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 23MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Current Rating 22A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Voltage 100V
Power Dissipation-Max 2.5W Ta 78W Tc
Current 22A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2680pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7.4A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 7.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dimensions
Height 750μm
Length 5mm
Width 6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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