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DMP210DUFB4-7B

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-XFDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 200mA Ta 200mA 350mW Ta 31.5ns
Buying Options
Total Price: USD $2.21
Unit Price: USD $0.22135
≥10 USD $0.22135
≥100 USD $0.1824
≥300 USD $0.1767
≥1000 USD $0.171
≥5000 USD $0.1653
Inventory: 8410
Minimum: 10
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+

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 15V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 19.3ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 31.5 ns
Turn-Off Delay Time 25.9 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 5.5Ohm
Drain to Source Breakdown Voltage -20V
Feedback Cap-Max (Crss) 20 pF

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

No data

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